PATENTS

1. Sangwoo Kang, "Semiconductor Device and Method For Fabricating the Same"
   United States Patent Filed US 2013/0292747 A1, September 7, 2012
   

2. Sangwoo Kang, "Semiconductor Device and Method For Fabricating the Same"
   Korean Patent Filed 10-2012-0046319, May 2, 2012
   

3. Sangwoo Kang, "Method of Manufacturing Semiconductor Device"
   Korean Patent Filed 10-2010-0088375, September 9, 2010
   Korean Patent No. 10-2012-0026254, March 19, 2012
   

4. Sangwoo Kang, "Method of Manufacturing Semiconductor Device"
   Korean Patent Filed 10-2008-0137347, December, 2008.
   

5. Byung-Gook Park, Sangwoo Kang, “Dual-Gate Single-Electron Transistor Having Self-Alignment and Fabrication Method of the Same”
   Korean Patent Filed 10-2006-0135357, December, 2006
   Korean Patent No. 10-0800507-0000, January 28, 2008
   
   

1. Sangwoo Kang was born in Seoul, South Korea, but lived most of his childhood life abroad in the US and UK. He received his BS and MS degrees in electrical engineering at Seoul National University where he studied CMOS scaling limits and single-electron transistors. He worked at Hynix Semiconductors for four years as a DRAM device engineer focusing on peripheral device development and ramp. He then went on to pursue his Ph D at the University of Texas at Austin where he studied 2D material based tunneling devices. He is currently working as a modeling engineer at Texas Instruments where he is delivering compact device models for embedded and analog products.