PUBLICATIONS | CONFERENCE

  1. [7] Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee, “Performance Factors for Interlayer Tunnel FETs Based on Layered Graphene-Hexagonal Boron Nitride-Graphene Heterostructures,” TECHCON 2016, Austin, USA, September 11-13, 2016.

  2. [6] Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee, “Insights into Interlayer Tunnel FET Performance Improvement: Lessons Learned From Graphene Hexagonal Boron Nitride Heterostructures,” 74th Device Research Conference (DRC), Newark, USA, June 19-22, 2016.

  3. [5] Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema C. P. Movva, Kyounghwan Kim, Chris Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee, “Double Bilayer Graphene Negative Differential Resistance Interlayer Tunnel FET,” TECHCON 2015, Austin, USA, September 20-22, 2015.

  4. [4] Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema C. P. Movva, Kyounghwan Kim, Chris Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee, “Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Operating as a Negative Differential Resistance Interlayer Tunnel FET,” The 11th International Nanotechnology Conference on Communication and Cooperation (INC11), Fukuoka, Japan, May 11-13, 2015.

  5. [3] Sangwoo Kang, Babak Fallahazad, Kayoung Lee, Hema C. P. Movva, Kyounghwan Kim, Chris Corbet, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee, “Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FETs,” APS March Meeting 2015, San Antonio, USA, March 2-6, 2015.

  6. [2] Sangwoo Kang, Jeong-Soo Park, Jae-Young Kim, Chi-Ho Lee and Seon-Yong Cha, "Effect of Forming Gas Hydrogen Passivation Anneal Condition on Hot Carrier Degradation Mechanism of nMOSFETs," The 18th Korean Conference on Semiconductors, Jaeju Island, Korea, Feb. 16-18, 2011.

  7. [1] Sangwoo Kang, Dae-Hwan Kim, Il-Han Park, Jin-Ho Kim, Joung-eob Lee, Jong-Duk Lee, and Byung-Gook Park, “Self-Aligned Dual-Gate Single-Electron Transistors (DG-SETs),” 2007 International Conference on Solid State Devices and Materials, pp. 1136-1137, Tsukuba, Japan, September 18-21, 2007.

  8. [31] Leonard F Register, G William Burg, Chris M Corbet, Babak Fallahazad, Sangwoo Kang, Kyounghwan Kim, Stefano Larentis, Kayoung Lee, Omar Mohammed, Xuehao Mou, Hema CP Movva, Nitin Prasad, Dharmendar Reddy, Amithraj Valsaraj, Xian Wu, Sanjay K Banerjee, Emanuel Tutuc, Nishtha Sharma, Qingxiao Wang, Moon Kim, Andrew Marshall, Jiamin Xue, Takashi Taniguchi, Kenji Watanabe, Luigi Colombo, “Resonant Interlayer Tunneling in 2D Van Der Waals-Materials-Based Channel-Dielectric-Channel Systems and Possible Device and Circuit Applications,” 232nd ECS Meeting, National Harbor, USA, October 1-5, 2017.

  9. [30] Amritesh Rai, Hema C. P. Movva, Sangwoo Kang, Stefano Larentis, Anupam Roy, Emanuel Tutuc, and Sanjay K. Banerjee, “Dual-Gated MoTe2/MoS2 van der Waals Heterojunction p-n Diode,” APS March Meeting 2017, New Orleans, USA, March 13-17, 2017.

  10. [29] Hema C. P. Movva, Sangwoo Kang, Amritesh Rai, Kyounghwan Kim, Babak Fallahazad, Emanuel Tutuc, and Sanjay K. Banerjee, “Room Temperature Gate-tunable Negative Differential Resistance in MoS2/hBN/WSe2 Heterostructures,” TECHCON 2016, Austin, USA, September 11-13, 2016.

  11. [28] Kyounghwan Kim, Matthew Yankovitz, Babak Fallahazad, Sangwoo Kang, Hema C. P. Movva, Shengqiang Huang, Stefano Larentis, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Brian J. LeRoy, Emanuel Tutuc, “Van der Waals Heterostructures with High Accuracy Rotational Alignment.” TECHCON 2016, Austin, USA, September 11-13, 2016.

  12. [27] Hema C. P. Movva, Sangwoo Kang, Amritesh Rai, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, and Sanjay K. Banerjee, “Room Temperature Gate-tunable Negative Differential Resistance in MoS2/hBN/WSe2 Heterostructures,” 74th Device Research Conference (DRC), Newark, USA, June 19-22, 2016.

  13. [26] Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Emanuel Tutuc, Sanjay K. Banerjee, “High-Mobility WSe2 FETs With Platinum Contacts,” TECHCON 2015, Austin, USA, September 20-22, 2015.

  14. [25] Hema Movva, Sangwoo Kang, Atresh Sanne, Amritesh Rai, Leonard F. Register and Sanjay K. Banerjee, “Interlayer Tunnel FETs and High Frequency FETs in Graphene and TMDs,” IEEE Photonics Society 2015 Summer Topicals Meeting, Nassau, Bahamas, July 13-15, 2015. [invited]

  15. [24] Emanuel Tutuc, Babak Fallahazad, Sangwoo Kang, Kayoung Lee,  Kyounghwan Kim, Hema C. P. Movva, X. Mou, Chris M. Corbet, Leonard F. Register, and Sanjay K. Banerjee, Gate tunable resonant tunneling in graphene-based heterostructures and device applications,” 73rd Device Research Conference (DRC), Columbus, USA, June 21-24, 2015.

  16. [23] Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, S. Guchhait, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K.  Banerjee, “Top-Gated WSe2 Field-Effect Transistors With Pt Contacts,” 73rd Device Research Conference (DRC), Columbus, USA, June 21-24, 2015.

  17. [22] Sanjay K. Banerjee, Leonard F. Register, Sangwoo Kang, “South West Academy of Nanoelectronics (SWAN): Development of Beyond-CMOS Devices,” The 11th International Nanotechnology Conference on Communication and Cooperation (INC11), Fukuoka, Japan, May 11-13, 2015.

  18. [21] Hema C. P. Movva, Sangwoo Kang, Amritesh Rai, Sanjay Banerjee, “Ambipolar Conduction in MoS2/WSe2 Hetero-Bilayers,” APS March Meeting 2015, San Antonio, USA, March 2-6, 2015.

  19. [20] Babak Fallahazad, Kayoung Lee, Sangwoo Kang, Jiamin Xue, Stefano Larentis, Christopher Corbet, Kyounghwan Kim, Hema Movva, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Sanjay K. Banerjee, Emanuel Tutuc, “Resonant Tunneling in Double Bilayer Graphene Heterostructures,” APS March Meeting 2015, San Antonio, USA, March 2-6, 2015.

  20. [19] Amritesh Rai, Rudresh Ghosh, Anupam Roy, Amithraj Valsaraj, Hema Movva, Sangwoo Kang, Emanuel Tutuc, Leonard Register, Sanjay Banerjee, “Air Stable Doping of MoS2 FETs Using TiOx Sol-Gel,” APS March Meeting 2015, San Antonio, USA, March 2-6, 2015.

  21. [18] Chris Corbet, Michael Ramon, Hema Movva, Dharmendar Reddy, Sangwoo Kang, Fahad Chowdhury, Deji Akinwande, Emanuel Tutuc, Frank Register, Sanjay Banerjee, “Novel Graphene Transistors,” The 224th Electrochemical Society Meeting, San Francisco, USA, October 27 - November 1, 2013.

  22. [17] Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, and Byung-Gook Park, " Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for room temperature operation, " 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Sapporo, Japan, pp.73-76, July 9-11, 2008.

  23. [16] Dong-Seup Lee, Sangwoo Kang, Kwon-Chil Kang, Joung-Eob Lee, Hong-Seon Yang, Jung Han Lee, Sang Hyuk Park, Jung Hoon Lee, Jong-Duk Lee, Hyungcheol Shin, and Byung-Gook Park, " Fabrication and Improved Characteristics of Self-Aligned Dual-Gate Single-Electron Transistors," IEEE 2008 Silicon Nanoelectronics Workshop, Honolulu, USA, P1-24, June 10-11, 2008.

  24. [15] Dong-Seup Lee, Hong-Seon Yang, Kwon-Chil Kang, Sangwoo Kang, Joung-Eob Lee, Jung Han Lee, Sang Hyuk Park and Byung-Gook Park, "Design and Simulation of Single-Electron Transistor (SET) with Electrical Tunneling Barriers," The 15th Korean Conference on Semiconductors, Pyeongchang, Korea, pp. 437-438, Feb. 161-162, 2008.

  25. [14] Joung-Eob Lee, Jong Pil Kim, Sangwoo Kang, Hong-Seon Yang, Dong-Seup Lee, Jae-Hyun Park, Kwon-Chil Kang, Jung Han Lee, Hyungcheol Shin, Jong Duk Lee, Byung-Gook Park, "Simulation of Dual Gate Single-Electron Transistor for Performance Improvement," The 15th Korean Conference on Semiconductors, Pyeongchang, Korea, pp. 159-160, Feb. 20-22, 2008.

  26. [13] Il Han Park, Seongjae Cho, Jung Hun Lee, Gil Seong Lee, Doo-Hyung Kim, Jang-Gn Yoon, Yoon Kim, Sangwoo Kang, Il Hwan Cho, Daewoong Kang, Jong-Duk Lee, and Byung-Gook Park, "Vertical AND (V-AND) Array: High Density, High Speed, and Reliable Flash Array," 2007 International Semiconductor Device Research Symposium, Maryland, USA, December 12-14, 2007.

  27. [12] Kwon-Chil Kang, Sangwoo Kang, Hong Sun Yang, Seung-hwan Song, Jinho Kim, Jong-Duk Lee, and Byung-Gook Park, "Poly-silicon Quantum Dot Single Electron Transistors," 2007 International Semiconductor Device Research Symposium, Maryland, USA, December 12-14, 2007.

  28. [11] Dong-Seup Lee, Sangwoo Kang, Joung-eob Lee, and Byung-Gook Park, “Design and Simulation of Single Hole Transistor with Tunneling Barrier Formed by Fixed Charge,” 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Gyeongju, Korea, pp. 152-155, June 25-27, 2007.

  29. [10] Jin Ho Kim, Seung-hwan Song, Sangwoo Kang, Kwon-Chil Kang, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, “Trench Tunneling Barrier Single-Electron Transistors (TSETs) Using Bandgap Increases by Quantum Confinement Effect,” IEEE 2007 Silicon Nanoelectronics Workshop, Kyoto, Japan, pp. 103-104, June 10-11, 2007.

  30. [9] Hoon Jeong, Yeun Seung Lee, Hanki Chung, Sangwoo Kang, Il Han Park, Chang Woo Oh, Ki-Whan Song, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, “A Capacitor-less 1T DRAM with High Sensing Margin,” IEEE 2007 Silicon Nanoelectronics Workshop, Kyoto, Japan, pp. 181-182, June 10-11, 2007.

  31. [8] Daewoong Kang, Sungnam Chang, Seunggun Seo, Yongwook Song, Hojin Yoon, Eunjung Lee, Dongwon Chang, Wonseong Lee, Byung-Gook Park, Jong Duk Lee, Il Han Park, Sangwoo Kang, and Hyungcheol Shin, “Improving the Endurance Characteristics Through Boron Implant at Active Edge in 1G NAND Flash,” IEEE 45th Annual International Reliability Physics Symposium, Pheonix, Arizona, USA, pp. 652-653, April 15-19, 2007.

  32. [7] Hoon Jeong, Yeun Seung Lee, Sangwoo Kang, Il Han Park, Woo Young Choi, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "Capacitorless DRAM Cell with Highly Scalable Surrounding Gate Structure," 2006 International Conference on Solid State Devices and Materials, pp.574-575, Yokohama, Japan, September 13-15, 2006.

  33. [6] Kwon-chil Kang, Sangwoo Kang, Jin Ho Kim, Hong Sun Yang, Woo Young Choi, Gil Seong Lee, Jong Duk Lee, and Byung-Gook Park, "An Approach to a Small Dot Fabricated with an Etch-back Process," International Technical Conference on Circuits/Systems, Computers and Communications 2006,Thailand, pp. I_37-I_40, July 10-13, 2006.

  34. [5] Jong Pil Kim, Woo Young Choi, Jae Young Song, Seongjae Cho, Sangwoo Kang, Sang Wan Kim, Jong Duk Lee, and Byung-Gook Park, "Design and Simulation of Asymmetric MOSFETs," 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Japan, pp. 175-178, July 3-5, 2006.

  35. [4] Seongjae Cho, Jang-Gn Yun, Il Han Park, Jung Hoon Lee, Jong Pil Kim, Sangwoo Kang, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, "Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles," 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Japan, pp. 171-174, July 3-5, 2006.

  36. [3] Seung-hwan Song, Kyung Rok Kim, Jin Ho Kim, Sangwoo Kang, Kwon Chil Kang, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, "Fabrication and Characterization of Tri-Gate Field-induced Inter-band Tunneling Effect Transistors (TG-FITETs),” IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, U.S.A, pp. 53-54, June 11-12, 2006.

  37. [2] Seung-hwan Song, Kyung Rok Kim, Sangwoo Kang, Jin Ho Kim, Kwon Chil Kang, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "Room Temperature Negative-Differential Trans-conductance Characteristics of Tri-Gate FITET," The 13th Korean Conference on Semiconductors, Jaeju Island, Korea, pp. 165-166, Feb. 23-24, 2006.

  38. [1] Seung-hwan Song, Kyung Rok Kim, Sangwoo Kang, Jin Ho Kim, Kwon Chil Kang, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, "Simulation Study on a Quasi Fermi Energy Movement in the Floating Body Region of FITET (Field-induced Inter-band Tunneling Effect Transistor)," IEEK Fall Conference 2005, Seoul, Korea, pp. 679-682, November 26, 2005.

  1. Sangwoo Kang was born in Seoul, South Korea, but lived most of his childhood life abroad in the US and UK. He received his BS and MS degrees in electrical engineering at Seoul National University where he studied CMOS scaling limits and single-electron transistors. He worked at Hynix Semiconductors for four years as a DRAM device engineer focusing on peripheral device development and ramp. He then went on to pursue his Ph D at the University of Texas at Austin where he studied 2D material based tunneling devices. He is currently working as a modeling engineer at Texas Instruments where he is delivering compact device models for embedded and analog products.